Influences of Nd doping on preparing Mg 2 Si semiconductor thin films by thermal evaporation

Micro & nano letters

article

Hong Yu¹  Yuee Luo¹  Xuewen Wang¹  Yi He¹  Lin Xu²  Liping Sun¹  Lijun Liao¹  Rui Deng¹ 

[1] School of Physics and Electronic Sciences, Guizhou Education University;Laboratory of Surface Physics and Chemistry, Guizhou Education University

关键词: vacuum deposition;    Raman spectra;    semiconductor thin films;    semiconductor growth;    X-ray diffraction;    lattice constants;    field emission scanning electron microscopy;    semiconductor doping;    semiconductor materials;    magnesium compounds;    neodymium;    surface morphology;    grain size;    Nd doping;    thermal evaporation method;    optical properties;    field emission scanning electron microscopy;    Nd dopant;    semiconductor thin films;    surface morphology;    diffraction peaks;    grain size;    n-Si(111) substrate;    X-ray diffraction;    Raman spectroscopy;    lattice constants;    structural properties;    Mg2SiNd;    Si;   

DOI  :  10.1049/mnl.2018.5593

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

In this work, the thermal evaporation method was adopted to prepare Nd-doped Mg 2 Si semiconductor thin films on n-Si(111) substrate. The structure, morphology and optical properties of these Mg 2 Si thin films doped with Nd were studied by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and Raman spectroscopy (RAMAN). The XRD results showed that Nd dopant led to weakened Mg 2 Si diffraction peaks and bigger lattice constants. The scanning electron microscopy results indicated decreased size of Mg 2 Si grains and clusters formed by the grains because of Nd dopant. The RAMAN results showed that the intensity of the characteristic peaks near 256 and 690 cm −1 decreased due to the influence of Nd doping.

【 授权许可】

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