Charge transport and impedance analysis of solution-processed perovskite-based device

Micro & nano letters

article

Swati Chaudhary¹  Varsha Yadav¹  Chandra Mohan Singh Negi²  Saral K. Gupta¹ 

[1] Department of Physics;Department of Electronics

关键词: electron-hole recombination;    hole mobility;    organic semiconductors;    organic-inorganic hybrid materials;    space-charge-limited conduction;    equivalent circuits;    semiconductor device models;    dark conductivity;    capacitance;    hole mobility;    perovskite layer;    measured impedance spectrum;    charge transport resistance;    impedance analysis;    solution-processed perovskite-based device;    charge transport properties;    DC current-voltage analysis;    AC impedance spectroscopy analysis;    current levels;    diode parameters;    Ohm's law;    space charge limited conduction;    charge transport analysis;    trap free SCLC;    solution-processed methylammonium lead iodide perovskite-based hole only device;    dark I-V curves;    equivalent circuit model;    recombination resistance;    capacitance;   

DOI  :  10.1049/mnl.2019.0597

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Herein, this work scrutinises the charge transport properties of solution-processed methylammonium lead iodide (MAPbI 3 ) perovskite-based hole only device through the DC current–voltage and AC impedance spectroscopy analysis. The device shows a significant increase in the current levels under illumination. Key diode parameters were estimated from the dark I–V curves. The dominance of Ohm's law at low bias, space charge limited conduction (SCLC) followed trap controlled SCLC at higher applied bias was observed from charge transport analysis. From the region dominated by the trap free SCLC, the hole mobility of 4.02 × 10 −6 cm 2 V −1 s −1 inside the perovskite layer was extracted. The measured impedance spectrum was analysed by fitting it with the equivalent circuit model, and the various physical parameters, such as charge transport resistance, recombination resistance and associated capacitance were approximated for the device.

【 授权许可】

CC BY|CC BY-ND|CC BY-NC|CC BY-NC-ND