Influence of nitrogen flow ratio on the optical property of AlN deposited by DC magnetron sputtering on Si (100) substrate

Micro & nano letters

article

Jun Han¹  Boyao Cui¹  Yanhui Xing¹  Tao Li¹  Jiahao Zhao¹  Xu Cao¹  Yao Zhang¹  Baoshun Zhang² 

[1] Key Laboratory of Opto-electronics Technology, Ministry of Education, Department of Informatics, Beijing University of Technology;Key Laboratory of Nanodevices and Applications, SuZhou Institute of Nano-tech and Nano-bionics

关键词: aluminium compounds;    sputtered coatings;    X-ray diffraction;    refractive index;    semiconductor growth;    sputter deposition;    semiconductor thin films;    III-V semiconductors;    wide band gap semiconductors;    buffer layers;    Fourier transform infrared spectra;    bonds (chemical);    tensile strength;    AlN film;    optical property;    nitrogen flow ratio;    DC magnetron sputtering;    Si (100) substrate;    direct current magnetron sputtering;    X-ray diffraction;    ellipsometer;    refractive index;    Fourier transform infrared spectroscopy;    Al-N bonds;    tensile stress;    temperature 293.0 K to 298.0 K;    AlN;    Si;   

DOI  :  10.1049/mnl.2019.0767

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Aluminum nitride (AlN) films were deposited on Si (100) substrate at room temperature in different N 2 flow ratios (N 2 /(N 2 + Ar)) by direct current (DC) magnetron sputtering. AlN films were prepared with the N 2 flow ratios from 20 to 50%. The intensity of X-ray diffraction peak on (002) plane enhanced with the increase of N 2 flow ratio. When the flow ratio of N 2 was 50%, the AlN film tended to be the most preferred orientation of (002) plane with the value of full width half maximum being 0.34°. Optical property was studied by ellipsometer and the refractive index of the samples was between 1.92 and 2.05. According to the Fourier transform infrared spectroscopy, the density of Al–N bonds went up gradually and the tensile stress had a rising trend with the increasing N 2 flow ratio. In short, this work is helpful for the growth of AlN buffer layer deposited on Si (100) substrate.

【 授权许可】

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