期刊论文详细信息
Nanoscale Research Letters
Post-annealing Effect on Optical and Electronic Properties of Thermally Evaporated MoOX Thin Films as Hole-Selective Contacts for p-Si Solar Cells
Shuangying Cao1  Linfeng Lu1  Guanlin Du1  Dongdong Li1  Yinyue Lin1  Jilei Wang2  Liyou Yang2  Wenqing Zhu3  Yuanwei Jiang4 
[1] CAS Key Lab of Low-Carbon Conversion Science and Engineering, The Interdisciplinary Research Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Zhangjiang Hi-Tech Park, Pudong, 201210, Shanghai, China;University of Chinese Academy of Sciences, 19 Yuquan Road, 100049, Beijing, China;Jinneng Clean Energy Technology LTD, 533 Guang’an Street, 030600, Jinzhong, China;School of Materials Science and Engineering, Shanghai University, 149 Yanchang Road, Jing’an, 200072, Shanghai, China;School of Materials Science and Engineering, Shanghai University, 149 Yanchang Road, Jing’an, 200072, Shanghai, China;CAS Key Lab of Low-Carbon Conversion Science and Engineering, The Interdisciplinary Research Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Zhangjiang Hi-Tech Park, Pudong, 201210, Shanghai, China;
关键词: Silicon heterojunction solar cells;    MoO hole-selective contacts;    Hole selectivity;    Work function;    Optoelectronic properties;   
DOI  :  10.1186/s11671-021-03544-9
来源: Springer
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【 摘 要 】

Owing to its large work function, MoOX has been widely used for hole-selective contact in both thin film and crystalline silicon solar cells. In this work, thermally evaporated MoOX films are employed on the rear sides of p-type crystalline silicon (p-Si) solar cells, where the optical and electronic properties of the MoOX films as well as the corresponding device performances are investigated as a function of post-annealing treatment. The MoOX film annealed at 100 °C shows the highest work function and proves the best hole selectivity based on the results of energy band simulation and contact resistivity measurements. The full rear p-Si/MoOX/Ag-contacted solar cells demonstrate the best performance with an efficiency of 19.19%, which is the result of the combined influence of MoOX’s hole selectivity and passivation ability.

【 授权许可】

CC BY   

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