Comparison of surface passivation of crystalline silicon by a-Si:H with and without atomic hydrogen treatment using hot-wire chemical vapor deposition

THIN SOLID FILMS

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Article; Proceedings Paper

Schuettauf, J. W. A.¹  van der Werf, C. H. M.¹  van Sark, W. G. J. H. M.¹  Rath, J. K.¹  Schropp, R. E. I.¹ 

[1] Univ Utrecht, Debye Inst Nanomat Sci, NL-3584 CC Utrecht, Netherlands

关键词: Hot wire CVD;    Surface pretreatment;    Atomic hydrogen;    Silicon heterojunction solar cells;   

DOI  :  10.1016/j.tsf.2011.01.319

来源: Elsevier

【 摘 要 】

We compared surface passivation of c-Si by a-Si:H with and without atomic hydrogen treatment prior to a-Si:H deposition. The atomic hydrogen is produced by hot-wire chemical vapor deposition (HWCVD). For this purpose, we deposited a-Si:H layers onto both sides of n-type FZ c-Si wafers and measured the minority carrier effective lifetime and implied V-OC for different H treatment times ranging from 5 s to 30 s prior to a-Si:H deposition. We found that increasing hydrogen treatment times led to lower effective lifetimes and implied V-OC values for the used conditions. The treatments have been performed in a new virgin chamber to exclude Si deposition from the chamber walls. Our results show that a short atomic hydrogen pretreatment is already detrimental for the passivation quality which might be due to the creation of defects in the c-Si. AFM measurements do not show any change in the surface roughness of the different samples. (C) 2011 Elsevier B.V. All rights reserved.

【 授权许可】

Free