Dopant-Tunable Ultrathin Transparent Conductive Oxides for Efficient Energy Conversion Devices

Nano-Micro Letters

Bo-Hyun Kim¹  Kee Joo Chang²  Ha-Jun Sung²  Jae Won Shim³  Tae Geun Kim³  Tae Ho Lee³  Dae Yun Kang³  Sungmin Kim³ 

[1] Department of Advanced Materials Engineering, Kongju National University, 31080, Cheonan, Republic of Korea;Department of Physics, Korea Advanced Institute of Science and Technology, 34141, Daejeon, Republic of Korea;School of Electrical Engineering, Korea University, 02841, Seoul, Republic of Korea;

关键词: Transparent conductive oxide;    Metal implantation;    High transparency;    Low sheet resistance;    Work function;   

DOI  :  10.1007/s40820-021-00735-y

来源: Springer

【 摘 要 】

tsDopant-tunable transparent conductive oxide (≤ 50 nm) fabricated via electric-field-driven metal implantation (m-TCOs; m= Ni, Ag, and Cu) is demonstrated.The m-TCOs exhibit ultrahigh transparency, low sheet resistance, and broad work function tunability, leading to outstanding performance in various optoelectronic devices.The work function change is attributed to the interstitial metal atoms that provide the empty d-orbital, resulting in the shift of the Fermi level.

【 授权许可】

CC BY