Crystallization behavior of ion beam sputtered HfO2 thin films and its effect on the laser-induced damage threshold

Journal of the European Optical Society-Rapid Publications

Aurelio Borzi¹  Antonia Neels¹  Daniel Schachtler²  Igor Stevanovic²  Alexander Stuck²  Thomas Gischkat²  Andreas Bächli²  Roelene Botha²  Zoltán Balogh-Michels³ 

[1] Center for X-ray Analytics, Empa, Überlandstrasse 129, CH8600, Dübendorf, Switzerland;RhySearch, Werdenbergstrasse 4, CH9471, Buchs, SG, Switzerland;RhySearch, Werdenbergstrasse 4, CH9471, Buchs, SG, Switzerland;Center for X-ray Analytics, Empa, Überlandstrasse 129, CH8600, Dübendorf, Switzerland;

关键词: Hafnia;    Grain growth;    Crystallization;    Thin films;    X-ray diffraction;    Laser-induced damage threshold;   

DOI  :  10.1186/s41476-021-00147-w

来源: Springer

【 摘 要 】

In this work, we present our results about the thermal crystallization of ion beam sputtered hafnia on 0001 SiO2 substrates and its effect on the laser-induced damage threshold (LIDT). The crystallization process was studied using in-situ X-ray diffractometry. We determined an activation energy for crystallization of 2.6 ± 0.5 eV. It was found that the growth of the crystallites follows a two-dimensional growth mode. This, in combination with the high activation energy, leads to an apparent layer thickness-dependent crystallization temperature. LIDT measurements @355 nm on thermally treated 3 quarter-wave thick hafnia layers show a decrement of the 0% LIDT for 1 h @773 K treatment. Thermal treatment for 5 h leads to a significant increment of the LIDT values.

【 授权许可】

CC BY