Characterization of SiC thin films deposited by HiPIMS

Materials Research

Gabriela Leal²  Tiago Moreira Bastos Campos²  Argemiro Soares Da Silva Sobrinho²  Rodrigo Sávio Pessoa¹  Homero Santiago Maciel²  Marcos Massi² 

[1],Instituto Tecnológico de Aeronáutica Centro Técnico Aeroespacial São José dos Campos SP ,Brazil

关键词: HiPIMS;    thin film;    silicon carbide;   

DOI  :  10.1590/S1516-14392014005000038

来源: SciELO

【 摘 要 】

In this work thin films of silicon carbide (SiC) were deposited on silicon wafers by High Power Impulse Magnetron Sputtering (HiPIMS) technique varying the average power of the discharge on a stoichiometric SiC target. X-ray diffraction, Raman spectroscopy, scanning electron microscopy and profilometry were used to analyze the films. It was observed that high values of the average electric power favors the formation of C-C bonds, while low values of the power promote the formation of Si-C bonds. At high power, we have also observed higher deposition rates, but the samples present surface imperfections, causing increase in the roughness and decrease in the film uniformity.

【 授权许可】

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