Flow-velocity Microsensors Based on Semiconductor Field-effect Structures

Sensors

Arshak Poghossian²  Tatsuo Yoshinobu¹ 

[1] Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan;Institute of Thin Films and Interfaces, Research Centre Jülich, D-52425 Jülich, Germany

关键词: Flow-velocity sensor;    time of flight;    ISFET;    LAPS;    pH;    ion generation.;   

DOI  :  10.3390/s30700202

来源: mdpi

【 摘 要 】

A time-of-flight-type flow-velocity sensor employing the in-situ electrochemically generation of ion-tracers is developed. The sensor consists of an ion  generator and two downstream-placed  pH-sensitive  Ta₂O₅-gate  ISFETs  (ion-sensitive  field-effect  transistor) that  detect generated H⁺- or OH^--ions. The results of the developed flow-velocity sensor under different modes of ion generation are presented and discussed. By applying this ISFET-array, the time of flight, and consequently, the flow velocity can be accurately evaluated using the shift of the response curve of the respective ISFETs in the array along the time scale. A good linearity between the measured flow velocity with the ISFET-array and the  delivered flow rate of the  pump is observed. In addition, a possibility of flow-velocity measurements by means of a LAPS (light-addressable  potentiometric  sensor)  is firstly demonstrated.

【 授权许可】

Unknown   
© 2003 by MDPI (http://www.mdpi.net).