Wide Bandgap Semiconductor Nanorod and Thin Film Gas Sensors

Sensors

Byoung Sam Kang¹  Hung-Ta Wang²  Li- Chia Tien¹  Fan Ren²  Brent P. Gila¹  David P. Norton¹  Cammy R. Abernathy¹  Jenshan Lin³ 

[1] Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611 USA;Department of Chemical Engineering, University of Florida, Gainesville, FL 32611 USA;Department of Electrical Engineering, University of Florida, Gainesville, FL 32611 USA

关键词: GaN;    ZnO;    gas sensors;   

DOI  :  10.3390/s6060643

来源: mdpi

【 摘 要 】

In this review we discuss the advances in use of GaN and ZnO-based solid-state sensors for gas sensing applications. AlGaN/GaN high electron mobility transistors (HEMTs) show a strong dependence of source/drain current on the piezoelectric polarization -induced two dimensional electron gas (2DEG). Furthermore, spontaneous and piezoelectric polarization induced surface and interface charges can be used to develop very sensitive but robust sensors for the detection of gases. Pt-gated GaN Schottky diodes and Sc₂O₃/AlGaN/GaN metal-oxide semiconductor diodes also show large change in forward currents upon exposure to H₂ containing ambients. Of particular interest are methods for detecting ethylene (C₂H₄), which offers problems because of its strong double bonds and hence the difficulty in dissociating it at modest temperatures. ZnO nanorods offer large surface area, are bio-safe and offer excellent gas sensing characteristics.

【 授权许可】

Unknown   
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