Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices

Sensors

Travis Anderson³  Fan Ren¹  Stephen Pearton²  Byoung Sam Kang³  Hung-Ta Wang³  Chih-Yang Chang³ 

[1] Department of Materials Science and Engineering, University of Florida / Gainesville, FL 32611, USA; E-Mail:;Department of Electrical and Computer Engineering, University of Florida / Gainesville, FL 32611, USA; E-Mail:;Department of Chemical Engineering, University of Florida / Gainesville, FL 32611, USA

关键词: GaN;    ZnO;    gas sensors;   

DOI  :  10.3390/s90604669

来源: mdpi

【 摘 要 】

In this paper, we review our recent results in developing gas sensors for hydrogen using various device structures, including ZnO nanowires and GaN High Electron Mobility Transistors (HEMTs). ZnO nanowires are particularly interesting because they have a large surface area to volume ratio, which will improve sensitivity, and because they operate at low current levels, will have low power requirements in a sensor module. GaN-based devices offer the advantage of the HEMT structure, high temperature operation, and simple integration with existing fabrication technology and sensing systems. Improvements in sensitivity, recoverability, and reliability are presented. Also reported are demonstrations of detection of other gases, including CO₂ and C₂H₄ using functionalized GaN HEMTs. This is critical for the development of lab-on-a-chip type systems and can provide a significant advance towards a market-ready sensor application.

【 授权许可】

CC BY   
© 2009 by the authors; licensee Molecular Diversity Preservation International, Basel, Switzerland.