A Standard CMOS Humidity Sensor without Post-Processing

Sensors

Oleg Nizhnik¹  Kohei Higuchi² 

[1] Maenaka Human-sensing Fusion Project, 8111, Shosha 2167, Himeji-shi, 671-2280 Hyogo-ken, Japan;

关键词: capacitive sensors;    microsensors;    humidity measurement;    CMOS integrated circuits;   

DOI  :  10.3390/s110606197

来源: mdpi

【 摘 要 】

A 2 μW power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023–10 humidity-sensitive layer, and a CMOS capacitance to voltage converter.

【 授权许可】

CC BY   
© 2011 by the authors; licensee MDPI, Basel, Switzerland.