Integration of Carbon Nanotubes in Microsystems: Local Growth and Electrical Properties of Contacts

Materials

Tormod B. Haugen¹  Bao Q. Ta¹  Einar Halvorsen¹  Nils Hoivik¹ 

[1] Department of Micro and Nano Systems Technology (IMST), Vestfold University College (HiVe), Raveien 197, 3184 Borre, P.O. Box 2243, Tønsberg N-3103, Norway;

关键词: carbon nanotubes;    local synthesis;    microheater;    contacts;    Schottky barrier;   

DOI  :  10.3390/ma6083094

来源: mdpi

【 摘 要 】

Carbon nanotubes (CNTs) have been directly grown onto a silicon microsystem by a local synthesis method. This method has potential for wafer-level complimentary metal-oxide-semiconductor (CMOS) transistor-compatible integration of CNTs into more complex Si microsystems; enabling, e.g., gas sensors at low cost. In this work, we demonstrate that the characteristics of CNTs grown on specific locations can be changed by tuning the synthesis conditions. We also investigate the role of the contact between CNTs and the Si microsystem; observing a large influence on the electrical characteristics of our devices. Different contact modes can render either an ohmic or Schottky-like rectifying characteristics.

【 授权许可】

CC BY   
© 2013 by the authors; licensee MDPI, Basel, Switzerland.