Dynamic Modeling for the Design and Cyclic Operation of an Atomic Layer Deposition (ALD) Reactor

Processes

Curtisha D. Travis¹ 

[1] Department of Chemical and Biomolecular Engineering, University of Maryland, College Park, MD 20742, USA; E-Mail

关键词: atomic layer deposition;    ALD;    alumina;    heterogeneous reaction kinetics;    reaction mechanism;    transition state theory;    limit-cycle;    reactor dynamics;    time discretization;    growth-per-cycle;   

DOI  :  10.3390/pr1020128

来源: mdpi

【 摘 要 】

A laboratory-scale atomic layer deposition (ALD) reactor system model is derived for alumina deposition using trimethylaluminum and water as precursors. Model components describing the precursor thermophysical properties, reactor-scale gas-phase dynamics and surface reaction kinetics derived from absolute reaction rate theory are integrated to simulate the complete reactor system. Limit-cycle solutions defining continuous cyclic ALD reactor operation are computed with a fixed point algorithm based on collocation discretization in time, resulting in an unambiguous definition of film growth-per-cycle (). A key finding of this study is that unintended chemical vapor deposition conditions can mask regions of operation that would otherwise correspond to ideal saturating ALD operation. The use of the simulator for assisting in process design decisions is presented.

【 授权许可】

CC BY   
© 2013 by the authors; licensee MDPI, Basel, Switzerland.