Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

Materials

Chun Zhao¹  Ce Zhou Zhao¹  Qifeng Lu¹  Xiaoyi Yan¹  Stephen Taylor¹  Paul R. Chalker² 

[1] Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK; E-Mails:;Department of Materials Science and Engineering, University of Liverpool, Liverpool L69 3GH, UK; E-Mail:

关键词: high-k dielectrics;    lanthanide aluminum oxides;    pulse capacitance-voltage (CV);    oxide traps;   

DOI  :  10.3390/ma7106965

来源: mdpi

【 摘 要 】

Oxide materials with large dielectric constants (so-called high-k dielectrics) have attracted much attention due to their potential use as gate dielectrics in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). A novel characterization (pulse capacitance-voltage) method was proposed in detail. The pulse capacitance-voltage technique was employed to characterize oxide traps of high-k dielectrics based on the Metal Oxide Semiconductor (MOS) capacitor structure. The variation of flat-band voltages of the MOS structure was observed and discussed accordingly. Some interesting trapping/detrapping results related to the lanthanide aluminum oxide traps were identified for possible application in Flash memory technology. After understanding the trapping/detrapping mechanism of the high-k oxides, a solid foundation was prepared for further exploration into charge-trapping non-volatile memory in the future.

【 授权许可】

CC BY   
© 2014 by the authors; licensee MDPI, Basel, Switzerland.