Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing

Materials

Qifeng Lu²  Chun Zhao¹  Yifei Mu²  Ce Zhou Zhao²  Stephen Taylor²  Paul R. Chalker³ 

[1] Nano and Advanced Materials Institute, Hong Kong University of Science and Technology, Kowloon 999077, Hong Kong, China; E-Mail:;Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK; E-Mails:;Department of Materials Science and Engineering, University of Liverpool, Liverpool L69 3GH, UK; E-Mail:

关键词: pulse capacitance-voltage;    lanthanide zirconium oxide;    oxide traps;    high temperature annealing;   

DOI  :  10.3390/ma8084829

来源: mdpi

【 摘 要 】

A powerful characterization technique, pulse capacitance-voltage (CV) technique, was used to investigate oxide traps before and after annealing for lanthanide zirconium oxide thin films deposited on n-type Si (111) substrates at 300 °C by liquid injection Atomic Layer Deposition (ALD). The results indicated that: (1) more traps were observed compared to the conventional capacitance-voltage characterization method in LaZrO_x; (2) the time-dependent trapping/de-trapping was influenced by the edge time, width and peak-to-peak voltage of a gate voltage pulse. Post deposition annealing was performed at 700 °C, 800 °C and 900 °C in N₂ ambient for 15 s to the samples with 200 ALD cycles. The effect of the high temperature annealing on oxide traps and leakage current were subsequently explored. It showed that more traps were generated after annealing with the trap density increasing from 1.41 × 10¹² cm⁻² for as-deposited sample to 4.55 × 10¹² cm⁻² for the 800 °C annealed one. In addition, the leakage current density increase from about 10⁻⁶ A/cm² at V_g = +0.5 V for the as-deposited sample to 10⁻³ A/cm² at V_g = +0.5 V for the 900 °C annealed one.

【 授权许可】

CC BY   
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