Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm

Materials

Chun Zhao¹  Ce Zhou Zhao¹  Stephen Taylor¹ 

[1] Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK; E-Mails:

关键词: non-volatile memory;    flash;    high-k dielectrics;    charge trapping memory;   

DOI  :  10.3390/ma7075117

来源: mdpi

【 摘 要 】

Flash memory is the most widely used non-volatile memory device nowadays. In order to keep up with the demand for increased memory capacities, flash memory has been continuously scaled to smaller and smaller dimensions. The main benefits of down-scaling cell size and increasing integration are that they enable lower manufacturing cost as well as higher performance. Charge trapping memory is regarded as one of the most promising flash memory technologies as further down-scaling continues. In addition, more and more exploration is investigated with high-k dielectrics implemented in the charge trapping memory. The paper reviews the advanced research status concerning charge trapping memory with high-k dielectrics for the performance improvement. Application of high-k dielectric as charge trapping layer, blocking layer, and tunneling layer is comprehensively discussed accordingly.

【 授权许可】

CC BY   
© 2014 by the authors; licensee MDPI, Basel, Switzerland.