In Situ Hall Effect Monitoring of Vacuum Annealing of In2O3:H Thin Films

Materials

Hans F. Wardenga¹  Mareike V. Frischbier¹  Monica Morales-Masis²  Andreas Klein¹ 

[1]Surface Science Division, Department of Materials- and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, Darmstadt 64287, Germany

[2] E-Mails:

[3]Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CP 526, CH-2002 Neuchâtel 2, Switzerland

[4] E-Mail:

关键词: H-doped indium oxide;    Hall effect;    grain boundary passivation;    hydrogen;    X-ray photoelectron spectroscopy (XPS);   

DOI  :  10.3390/ma8020561

来源: mdpi

【 摘 要 】

Hydrogen doped In₂O₃ thin films were prepared by room temperature sputter deposition with the addition of H₂O to the sputter gas. By subsequent vacuum annealing, the films obtain high mobility up to 90 cm²/Vs. The films were analyzed in situ by X-ray photoelectron spectroscopy (XPS) and ex situ by X-ray diffraction (XRD), optical transmission and Hall effect measurements. Furthermore, we present results from in situ Hall effect measurements during vacuum annealing of In₂O₃:H films, revealing distinct dependence of carrier concentration and mobility with time at different annealing temperatures. We suggest hydrogen passivation of grain boundaries as the main reason for the high mobility obtained with In₂O₃:H films.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland