Fe-Doping Effect on Thermoelectric Properties of p-Type Bi0.48Sb1.52Te3

Materials

Hyeona Mun²  Kyu Hyoung Lee¹  Suk Jun Kim⁴  Jong-Young Kim⁵  Jeong Hoon Lee⁶  Jae-Hong Lim³  Hee Jung Park⁷  Jong Wook Roh⁷  Sung Wng Kim² 

[1] Department of Nano Applied Engineering, Kangwon National University, Chuncheon 200-701, Korea; E-Mail:;Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Korea; E-Mail:;Electrochemistry Department, Korea Institute of Materials Science, Changwon 641-010, Korea; E-Mail:;School of Energy, Materials and Chemical Engineering, Korea University of Technology and Education, Cheonan 330-708, Korea; E-Mail:;Icheon Branch, Korea Institute of Ceramic Engineering and Technology, Icheon 467-843, Korea; E-Mail:;Department of Electrical Engineering, Kwangwoon University, Seoul 139-701, Korea; E-Mail:;Materials R&D Center, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 443-370, Korea; E-Mail:

关键词: doping;    Bi₂Te₃;    thermoelectric;    raw material;    lattice thermal conductivity;   

DOI  :  10.3390/ma8030959

来源: mdpi

【 摘 要 】

The substitutional doping approach has been shown to be an effective strategy to improve ZT of Bi₂Te₃-based thermoelectric raw materials. We herein report the Fe-doping effects on electronic and thermal transport properties of polycrystalline bulks of p-type Bi_0.48Sb_1.52Te₃. After a small amount of Fe-doping on Bi/Sb-sites, the power factor could be enhanced due to the optimization of carrier concentration. Additionally, lattice thermal conductivity was reduced by the intensified point-defect phonon scattering originating from the mass difference between the host atoms (Bi/Sb) and dopants (Fe). An enhanced ZT of 1.09 at 300 K was obtained in 1.0 at% Fe-doped Bi_0.48Sb_1.52Te₃ by these synergetic effects.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.