Simulations of Operation Dynamics of Different Type GaN Particle Sensors

Sensors

Eugenijus Gaubas¹  Tomas Ceponis²  Vidas Kalesinskas²  Jevgenij Pavlov²  Juozas Vysniauskas² 

[1] Institute of Applied Research and Faculty of Physics, Vilnius University, Sauletekio av. 9-III, LT-10222 Vilnius, Lithuania;

关键词: GaN;    multiplication;    impact ionization;    carrier lifetime;   

DOI  :  10.3390/s150305429

来源: mdpi

【 摘 要 】

The operation dynamics of the capacitor-type and PIN diode type detectors based on GaN have been simulated using the dynamic and drift-diffusion models. The drift-diffusion current simulations have been implemented by employing the software package Synopsys TCAD Sentaurus. The monopolar and bipolar drift regimes have been analyzed by using dynamic models based on the Shockley-Ramo theorem. The carrier multiplication processes determined by impact ionization have been considered in order to compensate carrier lifetime reduction due to introduction of radiation defects into GaN detector material.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.