Enhanced Responsivity of Photodetectors Realized via Impact Ionization

Sensors

Ji Yu¹  Chong-Xin Shan¹  Qian Qiao¹  Xiu-Hua Xie¹  Shuang-Peng Wang¹  Zhen-Zhong Zhang¹ 

[1] State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; E-Mails:

关键词: photodetector;    responsivity;    impact ionization;   

DOI  :  10.3390/s120201280

来源: mdpi

【 摘 要 】

To increase the responsivity is one of the vital issues for a photodetector. By employing ZnO as a representative material of ultraviolet photodetectors and Si as a representative material of visible photodetectors, an impact ionization process, in which additional carriers can be generated in an insulating layer at a relatively large electric field, has been employed to increase the responsivity of a semiconductor photodetector. It is found that the responsivity of the photodetectors can be enhanced by tens of times via this impact ionization process. The results reported in this paper provide a general route to enhance the responsivity of a photodetector, thus may represent a step towards high-performance photodetectors.

【 授权许可】

CC BY   
© 2012 by the authors; licensee MDPI, Basel, Switzerland