| Micromachines | |
| A Compact W-Band Reflection-Type Phase Shifter with Extremely Low Insertion Loss Variation Using 0.13 µm CMOS Technology | |
| Xiao-Dong Deng1  Yihu Li2  Wen Wu1  Yong-Zhong Xiong2  | |
| [1] Ministerial Key Laboratory of JGMT, Nanjing University of Science and Technology, Nanjing 210094, China; E-Mails:;Semiconductor Device Research Laboratory, Terahertz Research Centre, CAEP, Chengdu 611731, China; E-Mail: | |
| 关键词: W-band; reflection-type phase shifter; insertion loss variation; series LC resonators; lumped and distributed elements; CMOS technology; | |
| DOI : 10.3390/mi6030390 | |
| 来源: mdpi | |
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【 摘 要 】
This paper presents a reflection-type phase shifter (RTPS) at W-band in a 0.13 µm complementary metal oxide semiconductor (CMOS) process. The RTPS is composed of a 90° hybrid coupler and two identical reflection loads. Lumped-distributed element transmission line is introduced in the 90° hybrid coupler to reduce the chip size. Series inductor-capacitor (LC) resonators are used as the reflective loads and parallel inductors are deployed to reduce insertion loss variation. By cascading two-stage RTPS, 90° phase shifting range and 10.5 dB insertion loss with 1 dB variations from 80 GHz to 90 GHz are achieved. An impressive 0.1 dB variation is obtained at 86 GHz.
【 授权许可】
CC BY
© 2015 by the authors; licensee MDPI, Basel, Switzerland.
【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| RO202003190014848ZK.pdf | 350KB |
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