MOS-FET as a Current Sensor in Power Electronics Converters

Sensors

Rok Pajer¹  Miro Milanovič¹  Branko Premzel²  Miran Rodič¹ 

[1] Faculty of Electrical engineering and computer sciences, University of Maribor, Smetanova 17, SI-2000 Maribor, Slovenia; E-Mails:;Piktronik, Cesta k Tamu 17, SI-2000 Maribor, Slovenia; E-Mail:

关键词: power electronics;    converter;    MOS-FET;    current measurement;    thermal model;   

DOI  :  10.3390/s150818061

来源: mdpi

【 摘 要 】

This paper presents a current sensing principle appropriate for use in power electronics’ converters. This current measurement principle has been developed for metal oxide semiconductor field effect transistor (MOS-FET) and is based on ). The MOS-FET sensor is calibrated according to a reference sensor based on the Hall-effect principle. The program algorithm is executed on 32-bit ARM M4 MCU, STM32F407.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.