Research on the Piezoelectric Properties of AlN Thin Films for MEMS Applications

Micromachines

Meng Zhang¹  Jian Yang¹  Chaowei Si¹  Guowei Han¹  Yongmei Zhao¹  Jin Ning¹ 

[1] Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; E-Mails:

关键词: aluminum nitride;    MEMS;    finite element method;    piezoresponse force microscopy;    piezoelectric coefficient;   

DOI  :  10.3390/mi6091236

来源: mdpi

【 摘 要 】

In this paper, the piezoelectric coefficient d₃₃ of AlN thin films for MEMS applications was studied by the piezoresponse force microscopy (PFM) measurement and finite element method (FEM) simulation. Both the sample without a top electrode and another with a top electrode were measured by PFM to characterize the piezoelectric property effectively. To obtain the numerical solution, an equivalent model of the PFM measurement system was established based on theoretical analysis. The simulation results for two samples revealed the effective measurement value d_33-test should be smaller than the intrinsic value d₃₃ due to the clamping effect of the substrate and non-ideal electric field distribution. Their influences to the measurement results were studied systematically. By comparing the experimental results with the simulation results, an experimental model linking the actual piezoelectric coefficient d₃₃ with the measurement results d_33-test was given under this testing configuration. A novel and effective approach was presented to eliminate the influences of substrate clamping and non-ideal electric field distribution and extract the actual value d₃₃ of AlN thin films.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.