Electrical Compact Modeling of Graphene Base Transistors

Electronics

Sébastien Frégonèse¹  Stefano Venica¹  Francesco Driussi¹ 

[1] ¹CNRS and University of Bordeaux, IMS UMR 5218, Talence 33400, France ²DIEGM—University of Udine via delle Scienze, 208 22100 Udine, Italy

关键词: graphene;    transistor;    GBT;    circuit;    compact;    SPICE;    electrical;    model;    large signal;   

DOI  :  10.3390/electronics4040969

来源: mdpi

【 摘 要 】

Following the recent development of the Graphene Base Transistor (GBT), a new electrical compact model for GBT devices is proposed. The transistor model includes the quantum capacitance model to obtain a self-consistent base potential. It also uses a versatile transfer current equation to be compatible with the different possible GBT configurations and it account for high injection conditions thanks to a transit time based charge model. Finally, the developed large signal model has been implemented in Verilog-A code and can be used for simulation in a standard circuit design environment such as Cadence or ADS. This model has been verified using advanced numerical simulation.

【 授权许可】

CC BY   
This is an open access article distributed under the Creative Commons Attribution License (CC BY) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.