Optimization of Ballistic Deflection Transistors by Monte Carlo Simulations

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures

Millithaler, J.-F.^1 ; Iñiguez-De-La-Torre, I.^2 ; Mateos, J.^2 ; González, T.^2 ; Margala, M.^1

Department of Electrical and Computer Engineering, University of Massachusetts, Lowell

MA

01854, United States^1

Applied Physics Department, Salamanca University, Salamanca

37008, Spain^2

关键词: Logical circuit;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/647/1/012066/pdf
DOI  :  10.1088/1742-6596/647/1/012066

来源: IOP

【 摘 要 】

This paper presents an optimization of the current-voltage characteristic of Ballistic Deflection Transistors. The implementation of an adequate surface charge model in a Monte Carlo tool shows a very good agreement with the available experimental data and allows us to predict the influence of different parameters, like temperature, channel and trench dimensions on the device output. These results are of importance for further use of this device in logical circuit applications.