Graphene nano-ribbon and transition metal dichalcogenide field-effect transistor modeling and circuit simulation

graphene;transition metal dichalcogenide;transistor;flexible transistor;modeling;simulation

Chen, Ying-Yu

关键词: graphene;    transition metal dichalcogenide;    transistor;    flexible transistor;    modeling;    simulation;   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/88212/CHEN-DISSERTATION-2015.pdf?sequence=1&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

This dissertation presents a modeling and simulation study of graphene nano-ribbon and transition metal dichalcogenide field-effect transistors. Through compact modeling, SPICE implementation of the transistors is realized, and circuit-level simulation is enabled. Extensive simulation studies are performed to evaluate the performance of these two emerging devices.