Mechanism of NO Photocatalytic Oxidationon g-C3N4 Was Changed by Pd-QDs Modification

Molecules

Yuhan Li¹  Liping Yang²  Guohui Dong²  Wingkei Ho¹ 

[1] Department of Science and Environmental Studies, The Hong Kong Institute of Education, Tai Po, New Territories, Hong Kong, China;Laboratory of Environmental Sciences and Technology, Xinjiang Technical Institute of Physics & Chemistry, and Key Laboratory of Functional Materials and Devices for Special Environments, Chinese Academy of Sciences, Urumqi 830011, China;

关键词: quantum dot;    g-C₃N₄;    photocatalytic oxidation;    NO;   

DOI  :  10.3390/molecules21010036

来源: mdpi

【 摘 要 】

Quantum dot (QD) sensitization can increase the light absorption and electronic transmission of photocatalysts. However, limited studies have been conducted on the photocatalytic activity of photocatalysts after modification by noble metal QDs. In this study, we developed a simple method for fabricating Pd-QD-modified g-C₃N₄. Results showed that the modification of Pd-QDs can improve the NO photocatalytic oxidation activity of g-C₃N₄. Moreover, Pd-QD modification changed the NO oxidation mechanism from the synergistic action of h⁺ and O₂⁻ to the single action of ·OH. We found that the main reason for the mechanism change was that Pd-QD modification changed the molecular oxygen activation pathway from single-electron reduction to two-electron reduction. This study can not only develop a novel strategy for modifying Pd-QDs on the surface of photocatalysts, but also provides insight into the relationship between Pd-QD modification and the NO photocatalytic oxidation activity of semiconductor photocatalysts.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.