Novel Molecular Non-Volatile Memory: Application of Redox-Active Molecules

Applied Sciences

Hao Zhu¹  Qiliang Li² 

[1] State Key Laboratory of Application-Specific Integrated Circuits and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaDepartment of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030, USA;

关键词: molecular electronics;    redox-active molecules;    non-volatile memory;    high density;    high endurance;   

DOI  :  10.3390/app6010007

来源: mdpi

【 摘 要 】

This review briefly describes the development of molecular electronics in the application of non-volatile memory. Molecules, especially redox-active molecules, have become interesting due to their intrinsic redox behavior, which provides an excellent basis for low-power, high-density and high-reliability non-volatile memory applications. Recently, solid-state non-volatile memory devices based on redox-active molecules have been reported, exhibiting fast speed, low operation voltage, excellent endurance and multi-bit storage, outperforming the conventional floating-gate flash memory. Such high performance molecular memory will lead to promising on-chip memory and future portable/wearable electronics applications.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.