Intermittent Very High Frequency Plasma Deposition on Microcrystalline Silicon Solar Cells Enabling High Conversion Efficiency

Energies

Mitsuoki Hishida¹  Takeyuki Sekimoto²  Mitsuhiro Matsumoto³  Akira Terakawa³ 

[1] Automotive & Industrial Systems Company, Panasonic Corporation, Kadoma, Osaka 571-8506, JapanAdvanced Research Division, Panasonic Corporation, Seika, Kyoto 619-0237, Japan;Eco Solution Company, Panasonic Corporation, Kaizuka, Osaka 597-0094, Japan;

关键词: thin-film silicon tandem solar cell;    microcrystalline silicon;    amorphous silicon;    crystallinity;    plasma-enhanced chemical vapor deposition;    conversion efficiency;   

DOI  :  10.3390/en9010042

来源: mdpi

【 摘 要 】

Stopping the plasma-enhanced chemical vapor deposition (PECVD) once and maintaining the film in a vacuum for 30 s were performed. This was done several times during the formation of a film of i-layer microcrystalline silicon (μc-Si:H) used in thin-film silicon tandem solar cells. This process aimed to reduce defect regions which occur due to collision with neighboring grains as the film becomes thicker. As a result, high crystallinity (X_c) of μc-Si:H was obtained. Eventually, a solar cell using this process improved the conversion efficiency by 1.3% (0.14 points), compared with a normal-condition cell. In this paper, we propose an easy method to improve the conversion efficiency with PECVD.

【 授权许可】

CC BY   
© 2016 by the authors; licensee MDPI, Basel, Switzerland.