Energies | |
Intermittent Very High Frequency Plasma Deposition on Microcrystalline Silicon Solar Cells Enabling High Conversion Efficiency | |
Mitsuoki Hishida1  Takeyuki Sekimoto2  Mitsuhiro Matsumoto3  Akira Terakawa3  | |
[1] Automotive & Industrial Systems Company, Panasonic Corporation, Kadoma, Osaka 571-8506, JapanAdvanced Research Division, Panasonic Corporation, Seika, Kyoto 619-0237, Japan;Eco Solution Company, Panasonic Corporation, Kaizuka, Osaka 597-0094, Japan; | |
关键词: thin-film silicon tandem solar cell; microcrystalline silicon; amorphous silicon; crystallinity; plasma-enhanced chemical vapor deposition; conversion efficiency; | |
DOI : 10.3390/en9010042 | |
来源: mdpi | |
【 摘 要 】
Stopping the plasma-enhanced chemical vapor deposition (PECVD) once and maintaining the film in a vacuum for 30 s were performed. This was done several times during the formation of a film of i-layer microcrystalline silicon (μc-Si:H) used in thin-film silicon tandem solar cells. This process aimed to reduce defect regions which occur due to collision with neighboring grains as the film becomes thicker. As a result, high crystallinity (
【 授权许可】
CC BY
© 2016 by the authors; licensee MDPI, Basel, Switzerland.
【 预 览 】
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RO202003190000182ZK.pdf | 1325KB | download |