Improvement of the efficiency of triple junction n-i-p solar cells with hot-wire CVD proto- and microcrystalline silicon absorber layers

THIN SOLID FILMS

卷:516

Article; Proceedings Paper

Stolk, R. L.¹  Li, H.¹  Franken, R. H.¹  Schuttauf, J. W. A.¹  van der Werf, C. H. M.¹  Rath, J. K.¹  Schropp, R. E. I.¹ 

[1] Univ Utrecht, Fac Sci, SID Phys Devices, NL-3508 TA Utrecht, Netherlands

关键词: hot-wire;    CVD;    microcrystalline silicon;    multijunction;    textured back reflector;    profiling;   

DOI  :  10.1016/j.tsf.2007.06.110

来源: Elsevier

【 摘 要 】

Hot-wire chemical vapour deposition (HWCVD) was applied for the deposition of intrinsic protocrystalline (proto-Si:H) and microcrystalline silicon (mu c-Si:H) absorber layers in thin film solar cells. For a single junction mu c-Si:H n-i-p cell on a Ag/ZnO textured back reflector (TBR) with a 2.0 mu m i-layer, an 8.5% efficiency was obtained, which showed to be stable after 750 h of light-soaking. The short-circuit current density (Jsc) of this cell was 23.4 mA/cm(2), with a high open-circuit voltage (V-oc) and fill factor (FF) of 0.545 V and 0.67. Triple junction n-i-p cells were deposited using proto-Si:H, plasma-deposited proto-SiGe:H and mu c-Si:H as top, middle and bottom cell absorber layers. With Ag/ZnO TBR's from our lab and United Solar Ovonic LLC, respective initial efficiencies of 10.45% (2.030 V, 7.8 mA/cm(2), 0.66) and 10.50% (2.113 V, 7.4 mA/cm(2), 0.67) were achieved. (c) 2007 Elsevier B.V All rights reserved.

【 授权许可】

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