Effects of source-drain underlaps on the performance of silicon nanowire on insulator transistors

Nano-Micro Letters

Khairul Alam¹  Sishir Bhowmick¹ 

关键词: Silicon nanowire;    Insulator transistors;    Source-drain;   

DOI  :  10.5101/nml.v2i2.p83-88

来源: Open Access House of Science and Technology

【 摘 要 】

Theeffectsofsource-drainunderlapsontheperformanceofatopgatesiliconnanowireoninsulatortransistorarestudiedusingathreedimensional(3D)self-consistentPoisson-Schrodingerquantumsimulation.Voltage-controlledtunnelbarrieristhedevicetransportphysics.Theoffcurrent,theon/offcurrentratio,andtheinversesubthresholdslopeareimprovedwhiletheoncurrentisdegradedwithunderlap.Thephysicsbehindthisbehavioristhemodulationofatunnelbarrierwithunderlap.Theunderlapprimarilyaffectsthetunnelingcomponentofdraincurrent.About50%contributiontothegatecapacitancecomesfromthefringingelectricfieldsemanatingfromthegatemetaltothesourceanddrain.Thegatecapacitancereduceswithunderlap,whichshouldreducetheintrinsicswitchingdelayandincreasetheintrinsiccut-offfrequency.However,boththeoncurrentandthetransconductancereducewithunderlap,andtheconsequenceistheincreaseofdelayandthereductionofcut-offfrequency.

【 授权许可】

Unknown