Effect of a Funnel-Shaped Radiation Shield on the Characteristics of a Silicon CZ Furnace

JOURNAL OF CHEMICAL ENGINEERING OF JAPAN

Takao Tsukada²  Mitunori Hozawa²  Nobuyuki Imaishi¹  Koji Honda¹ 

[1] Institute of Advanced Material Study, Kyushu University;Institute for Chemical Reaction Science, Tohoku University

关键词: Crystal Growth;    Silicon;    Single Crystal;    Radiation Heat Transfer;    Thermal Stress;    Finite Element Analysis;    Czochralski Method;   

DOI  :  10.1252/jcej.25.84

来源: Maruzen Company Ltd

【 摘 要 】

References(18)Cited-By(3)For the 6″ silicon CZ system, effects of a funnel-shaped radiation shield on the temperature profiles in the melt and crystal, the melt/crystal interface shape and also the distribution of the thermal stresses were investigated theoretically by the finite element analysis based on the conduction-dominated model.It is found that a funnel-shaped radiation shield can make the melt/crystal interface less convex to the crystal (relatively flatter), providing a higher pull rate and smaller thermal stresses in the crystal compared with other radiation shield geometries, such as a doughnut (torus) shape. Also, the principal operating conditions in the CZ system, such as the crucible temperature, can be changed widely by selecting the emissivity and/or thickness of the shield.

【 授权许可】

Unknown