EFFECT OF A RADIATION SHIELD ON SILICON CZ GROWTH

JOURNAL OF CHEMICAL ENGINEERING OF JAPAN

TAKAO TSUKADA¹  KATSUHIKO FUJINAWA¹  MITSUNORI HOZAWA¹  NOBUYUKI IMAISHI¹ 

[1] Chemical Research Institute of Non-Aqueous Solutions, Tohoku University

关键词: Crystal Growth;    Silicon;    Czochralski Method;    Radiation Shield;    Heat Conduction;    Interface Shape;    Numerical Simulation;    Finite Element Method;   

DOI  :  10.1252/jcej.20.146

来源: Maruzen Company Ltd

【 摘 要 】

References(12)Cited-By(8)For silicon CZ crystal growth, the effect of inserting a radiation shield into the furnace on the temperature profile in the melt and crystal and on the shape of the melt/crystal interface was studied theoretically by use of finite element analysis based on the conduction-dominated model. It was found that inserting a radiation shield makes the interface shape less convex to the crystal in comparison with that without the shield except for the initial stage. Also, with use of a short radiation shield there is a possibility of obtaining a higher pull rate because the temperature gradient near the interface becomes steeper than that without the shield.

【 授权许可】

Unknown