JOURNAL OF CHEMICAL ENGINEERING OF JAPAN | |
EFFECT OF A RADIATION SHIELD ON SILICON CZ GROWTH | |
TAKAO TSUKADA1  KATSUHIKO FUJINAWA1  MITSUNORI HOZAWA1  NOBUYUKI IMAISHI1  | |
[1] Chemical Research Institute of Non-Aqueous Solutions, Tohoku University | |
关键词: Crystal Growth; Silicon; Czochralski Method; Radiation Shield; Heat Conduction; Interface Shape; Numerical Simulation; Finite Element Method; | |
DOI : 10.1252/jcej.20.146 | |
来源: Maruzen Company Ltd | |
【 摘 要 】
References(12)Cited-By(8)For silicon CZ crystal growth, the effect of inserting a radiation shield into the furnace on the temperature profile in the melt and crystal and on the shape of the melt/crystal interface was studied theoretically by use of finite element analysis based on the conduction-dominated model. It was found that inserting a radiation shield makes the interface shape less convex to the crystal in comparison with that without the shield except for the initial stage. Also, with use of a short radiation shield there is a possibility of obtaining a higher pull rate because the temperature gradient near the interface becomes steeper than that without the shield.
【 授权许可】
Unknown
【 预 览 】
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RO201912080692754ZK.pdf | 423KB | download |