Effect of a Radiation Shield on Thermal Stress Field during Czochralski Crystal Growth of Silicon

JOURNAL OF CHEMICAL ENGINEERING OF JAPAN

Takao Tsukada²  Mitsunori Hozawa²  Nobuyuki Imaishi¹ 

[1] Institute of Advanced Material Study, Kyushu University;Chemical Research Institute of Non-Aqueous Solutions, Tohoku University

关键词: Crystal Growth;    Silicon;    Czochralski Method;    Radiation Shield;    Thermal Stress;    Finite Element Method;   

DOI  :  10.1252/jcej.23.186

来源: Maruzen Company Ltd

【 摘 要 】

References(14)Cited-By(10)For silicon CZ crystal growth, the effect of a radiation shield inserted in a furnace on the thermal stress field was studied theoretically by the finite-element method based on thermoelastic analysis.It is found that a radiation shield lowers the maximum (thermally induced) shear stress, since it reduces the temperature gradient, especially in the radial direction, in a crystal. There is an optimum location for placement of the radiation shield so as to realize the smallest shear stress. From the viewpoint of thermal stress, a radiation shield can allow a higher pull rate of defect-free crystal.

【 授权许可】

Unknown