JOURNAL OF CHEMICAL ENGINEERING OF JAPAN | |
Effect of a Radiation Shield on Thermal Stress Field during Czochralski Crystal Growth of Silicon | |
Takao Tsukada2  Mitsunori Hozawa2  Nobuyuki Imaishi1  | |
[1] Institute of Advanced Material Study, Kyushu University;Chemical Research Institute of Non-Aqueous Solutions, Tohoku University | |
关键词: Crystal Growth; Silicon; Czochralski Method; Radiation Shield; Thermal Stress; Finite Element Method; | |
DOI : 10.1252/jcej.23.186 | |
来源: Maruzen Company Ltd | |
【 摘 要 】
References(14)Cited-By(10)For silicon CZ crystal growth, the effect of a radiation shield inserted in a furnace on the thermal stress field was studied theoretically by the finite-element method based on thermoelastic analysis.It is found that a radiation shield lowers the maximum (thermally induced) shear stress, since it reduces the temperature gradient, especially in the radial direction, in a crystal. There is an optimum location for placement of the radiation shield so as to realize the smallest shear stress. From the viewpoint of thermal stress, a radiation shield can allow a higher pull rate of defect-free crystal.
【 授权许可】
Unknown
【 预 览 】
Files | Size | Format | View |
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RO201912080693132ZK.pdf | 1000KB | download |