Effect of Interface Inversion on Thermal Stress Field in CZ Crystal Growth of Oxide

JOURNAL OF CHEMICAL ENGINEERING OF JAPAN

Takao Tsukada²  Mitsunori Hozawa²  Nobuyuki Imaishi¹ 

[1] Institute of Advanced Material Study, Kyushu University;Chemical Research Institute of Non-Aqueous Solutions, Tohoku University

关键词: Crystal Growth;    Oxide;    Sapphire;    Czochralski Method;    Interface Inversion;    Thermal Stress;    Finite Element Method;   

DOI  :  10.1252/jcej.23.286

来源: Maruzen Company Ltd

【 摘 要 】

References(15)Cited-By(7)For CZ crystal growth of an oxide (Al2O5), finite element analyses of the thermal stress field in the crystal are carried out, and the effect of interface shape on the maximum shear stress in the crystal is investigated.When the crystal rotation rate increases, with other operating conditions unchanged, the melt/crystal interface changes its shape from convex to concave toward the melt at the critical Reynolds number (Res*). When Res Res*, the maximum value of the thermal stress on the interface is insensible to Res and its radial profile is an inversed W-shape. When Res exceeds Res*, however, thermal stress on the interface increases very rapidly and its radial profile becomes W-shaped.

【 授权许可】

Unknown