Gallium Nitride (GaN) Heterogeneous Source Drain MOSFET

Schottky barrier MISFET;Sapphire;MOCVD;Schottky Barrier MOSFET

Ma, Lei ; John Muth, Committee Member,Leda Lunardi, Committee Member,Mark Johnson, Committee Member,Doug Barlage, Committee Chair,Ma, Lei ; John Muth ; Committee Member ; Leda Lunardi ; Committee Member ; Mark Johnson ; Committee Member ; Doug Barlage ; Committee Chair

University:North Carolina State University

关键词: Schottky barrier MISFET;    Sapphire;    MOCVD;    Schottky Barrier MOSFET;   

Others  :  https://repository.lib.ncsu.edu/bitstream/handle/1840.16/4478/etd.pdf?sequence=1&isAllowed=y

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