Numerical method for a 2D drift diffusion model arising in strained n-type MOSFET device

Pramana

LATRECHE SAIDA¹  BENSEGUENI RACHIDA1¹ 

[1] Laboratoire Hyperfréquences & Semi-conducteurs (LHS), Département d’Electronique, Faculté des Sciences de la Technologie, Université Constantine1, Constantine 25000, Algérie$$

关键词: Simulation;    model;    finite difference method;    electron transport;    enhancement mobility.;   

DOI  :  

学科分类：物理（综合）

来源: Indian Academy of Sciences

【 摘 要 】

This paper reports the calculation of electron transport in metal oxide semiconductor field effects transistors (MOSFETs) with biaxially tensile strained silicon channel. The calculation is formulated based on two-dimensional drift diffusion model (DDM) including strain effects. The carrier mobility dependence on the lateral and vertical electric field model is especially consideredin the formulation. By using the model presented here, numerical method based on finite difference approach is performed. The obtained results show that the presence of biaxially tensile strain enhances the current in the devices.

【 授权许可】

Unknown