Role of Ge incorporation in the physical and dielectric properties of Se$_{75}$Te$_{25}$ and Se$_{85}$Te$_{15}$ glassy alloys

Pramana

KUMAR S¹  SHARMA J1¹ 

[1] Department of Physics, Christ Church College, Kanpur 208 001, India$$

关键词: Chalcogenide glasses;    dielectric measurements;    defect states.;   

DOI  :  

学科分类：物理（综合）

来源: Indian Academy of Sciences

【 摘 要 】

The effect of Ge additive on the physical and dielectric properties of Se$_{75}$Te$_{25}$ and Se$_{85}$Te$_{15}$ glassy alloys has been investigated. It is inferred that on adding Ge, the physical propertiesi.e., average coordination number, average number of constraints and average heat of atomization increase but lone pair electrons, fraction of floppy modes, electronegativity, degree of crosslinking and deviation of stoichiometry (R) decrease. The effect of Ge doping on the dielectric propertiesof the bulk Se$_{75}$Te$_{25}$ and Se$_{85}$Te$_{15}$ glassy alloys has also been studied in the temperature range 300–350 K for different frequencies (1 kHz–5 MHz). It is found that, with doping, the dielectric constant $epsilon'$ and dielectric loss $epsilon "$ increase with increase in temperature and decrease with increase in frequency. The role of the third element Ge, as an impurity in the two pure binary Se$_{75}$Te$_{25}$ and Se$_{85}$Te$_{15}$ glassy alloys has been discussed in terms of the nature of covalent bonding and electronegativity difference between the elements used in making the aforesaid glassy systems.

【 授权许可】

Unknown