期刊论文详细信息
Pramana
Electrical properties of a-Ge𝑥Se100-𝑥
Abdolali Zolanvari1  S K Tripathi2  Navdeep Goyal22 
[1] Department of Physics, Arak University, Arak 38156, Iran$$;Department of Physics, Panjab University, Chandigarh 160 014, India$$
关键词: Chalcogenides;    hopping conduction;    defect states.;   
DOI  :  
学科分类:物理(综合)
来源: Indian Academy of Sciences
PDF
【 摘 要 】

In general, the conductivity in chalcogenide glasses at higher tempratures is dominated by band conduction (DC conduction). But, at lower tempratures, hoping conduction dominates over band conduction. A study at lower temprature can, eventually, provide useful information about the conduction mechanism and the defect states in the material. Therefore, the study of electrical properties of Ge𝑥Se100-𝑥 in the lower temperature region (room temperature) is interesting. Temperature and frequency dependence of Ge𝑥Se100-𝑥 (𝑥 = 15, 20 and 25) have been studied over different range of temperatures and frequencies. Am agreement between experimental and theoretical results suggested that the behaviour of germanium selenium system (Ge𝑥Se100-𝑥) have been successfully explained by correlated barrier hopping (CBH) model.

【 授权许可】

Unknown   

【 预 览 】
附件列表
Files Size Format View
RO201912040496704ZK.pdf 2201KB PDF download
  文献评价指标  
  下载次数:19次 浏览次数:22次