| Pramana | |
| Electrical properties of a-Geð‘¥Se100-ð‘¥ | |
| Abdolali Zolanvari1  S K Tripathi2  Navdeep Goyal22  | |
| [1] Department of Physics, Arak University, Arak 38156, Iran$$;Department of Physics, Panjab University, Chandigarh 160 014, India$$ | |
| 关键词: Chalcogenides; hopping conduction; defect states.; | |
| DOI : | |
| 学科分类:物理(综合) | |
| 来源: Indian Academy of Sciences | |
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【 摘 要 】
In general, the conductivity in chalcogenide glasses at higher tempratures is dominated by band conduction (DC conduction). But, at lower tempratures, hoping conduction dominates over band conduction. A study at lower temprature can, eventually, provide useful information about the conduction mechanism and the defect states in the material. Therefore, the study of electrical properties of Geð‘¥Se100-ð‘¥ in the lower temperature region (room temperature) is interesting. Temperature and frequency dependence of Geð‘¥Se100-ð‘¥ (ð‘¥ = 15, 20 and 25) have been studied over different range of temperatures and frequencies. Am agreement between experimental and theoretical results suggested that the behaviour of germanium selenium system (Geð‘¥Se100-ð‘¥) have been successfully explained by correlated barrier hopping (CBH) model.
【 授权许可】
Unknown
【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| RO201912040496704ZK.pdf | 2201KB |
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