A physics-based potential and electric field model of a nanoscale rectangular high-K gate dielectric HEMT

Pramana

Bhowmick B1¹  Das B¹  Goswami R¹ 

[1] Electronics and Communication Engineering Department, National Institute of Technology, Silchar 788 010, India$$

关键词: AlGaN/GaN;    HEMT;    surface potential;    channel potential;    electric field.;   

DOI  :  

学科分类：物理（综合）

来源: Indian Academy of Sciences

【 摘 要 】

In this paper, we have developed a physics-based model for surface potential, channel potential, electric field and drain current for AlGaN/GaN high electron mobility transistor with high-K gate dielectric using two-dimensional Poisson equation under full depletion approximation with the inclusion of effect of polarization charges. The accuracy of the model has been verified and is found to be in good agreement with the simulated results.

【 授权许可】

Unknown