IEEE Journal of the Electron Devices Society | |
1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V | |
Shenglei Zhao1  Yachao Zhang1  Haiyong Wang1  Chong Wang1  Jincheng Zhang1  Ming Du2  Xuefeng Zheng2  Chunfu Zhang2  Wei Mao2  Yue Hao2  | |
[1] Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi&x2019;an, China; | |
关键词: AlGaN/GaN; HEMT; reverse blocking; ultralow turn-on voltage; hybrid Schottky-ohmic drain with tungsten; | |
DOI : 10.1109/JEDS.2020.3042264 | |
来源: DOAJ |
【 摘 要 】
A reverse-blocking AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (RB-MISHEMT) is proposed and fabricated. Compared with the conventional MISHEMT with ohmic drain, the proposed device features a hybrid Schottky-ohmic drain with a low work function Tungsten (W), based on which the state-of-the-art ultralow turn-on voltage (
【 授权许可】
Unknown