AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein

Sensors

Hee Ho Lee²  Myunghan Bae²  Sung-Hyun Jo²  Jang-Kyoo Shin¹  Dong Hyeok Son²  Chul-Ho Won²  Hyun-Min Jeong²  Jung-Hee Lee²  Shin-Won Kang² 

[1] School of Electronics Engineering, Kyunpook National University, 80 Daehakro, Buk-gu, Daegu 702-701, Korea;

关键词: AlGaN/GaN;    HEMT;    CRP;    biosensor;    null-balancing circuit;   

DOI  :  10.3390/s150818416

来源: mdpi

【 摘 要 】

In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT)-based biosensor for the detection of C-reactive protein (CRP) using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the sensor directly. The output voltage of the proposed biosensor was varied by antigen-antibody interactions on the gate surface due to CRP charges. The AlGaN/GaN HFET-based biosensor with null-balancing circuit applied shows that CRP can be detected in a wide range of concentrations, varying from 10 ng/mL to 1000 ng/mL. X-ray photoelectron spectroscopy was carried out to verify the immobilization of self-assembled monolayer with Au on the gated region.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.