Channel length scaling and the impact of metal gate work function on the performance of double gate-metal oxide semiconductor field-effect transistors

Pramana

S Latreche¹  C Gontrand²  D Rechem1¹ 

[1] Laboratoire Hyperfréquence et Semi-conducteur (L.H.S), Département d’Electronique, Faculté des Sciences de l'ingénieur, Université Mentouri de Constantine, 25000, Algérie$$;INL, bât. Blaise Pascal INSA 20, av. Jean Capelle 69621, Villeurbanne Cedex, France$$

关键词: Nanotransistor;    metal oxide semiconductor field-effect transistors;    silicon-on-insulator;    work function;    quantum effects;    self-consistent.;   

DOI  :  

学科分类：物理（综合）

来源: Indian Academy of Sciences

【 摘 要 】

In this paper, we study the effects of short channel on double gate MOSFETs. We evaluate the variation of the threshold voltage, the subthreshold slope, the leakage current and the drain-induced barrier lowering when channel length 𝐿CH decreases. Further- more, quantum effects on the performance of DG-MOSFETs are addressed and discussed. We also study the influence of metal gate work function on the performance of nanoscale MOSFETs. We use a self-consistent Poisson–Schrödinger solver in two dimensions over the entire device. A good agreement with numerical simulation results is obtained.

【 授权许可】

Unknown