Transport and stability studies on high band gap a-Si:H films prepared by argon dilution

Pramana

Purabi Gogoi¹  P N Dixit²  Pratima Agarwal1¹ 

[1] Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781 039, India$$;Plasma Processed Materials Division, National Physical Laboratory, New Delhi 110 012, India$$

关键词: Amorphous silicon;    argon dilution;    stability;    deposition rate;    Staebler Wronski effect.;   

DOI  :  

学科分类：物理（综合）

来源: Indian Academy of Sciences

【 摘 要 】

Device quality hydrogenated amorphous silicon films (a-Si:H) are deposited at a high deposition rate (4-5 Ã…/s) using a mixture of argon and hydrogen-diluted silane. The films exhibit good opto-electronic properties and show less degradation upon light soaking. Light-induced changes in conductivity could be annealed at much lower temperature. The presence of Ar* and atomic hydrogen in plasma replaces the weak Si-Si bonds, which are responsible for light-induced degradation by strong Si-Si bonds. This results in the improved stability of the films.

【 授权许可】

Unknown