Stability of an Amorphous Silicon Oscillator

ETRI Journal

关键词: Oscillator;    RFID;    Integrated Circuits;    Thin Film Transistors;    Amorphous silicon;   

Others  :  1185467
DOI  :  10.4218/etrij.06.0105.0104

【 摘 要 】

An RC oscillator using amorphous silicon thin film transistors was developed. The oscillation frequency and its dependence on resistance and bias voltage were studied. The frequency was controlled by adjusting the feedback resistance of the oscillator. The highest measured frequency of the oscillator was around 140 kHz, which is acceptable for low-end radio frequency identification (RFID). Since a low-end RFID circuit needs low cost and a simple process, an amorphous silicon oscillator is suitable.

   

【 参考文献 】

• [1]B.Z. Kaplan and B. Zion, "On the Simplified Implementation of Quadrature Oscillator Models and the Expected Quality of their Operation as VCO’s," Proc. IEEE, vol. 68, no. 6, 1980, pp. 745-746.
• [2]A. Kobayahi, Y. Hori, and S. Nakamura, "State Variable Sinusoidal Switched-Current Oscillator," Electronics Lett., vol. 27, no. 6, Mar. 1991, pp. 489-491.
• [3]I.A. Kahn, M.T. Ahmed, and N. Minhaj, "Tunable OTA-based Multiphase Sinusoidal Oscillators," Int’l J. of Electronics, vol. 72, no. 3, 1992, pp. 443-450.
• [4]M.T. Darkani and B.B. Bhatacharya, "Generation and Design of Canonic Grounded-Capacitor Variable-Frequency RC-Active Oscillators," IEE Proc. G, Electronic Circuits and Systems, vol. 132, no. 4, 1985, pp. 153-160.
• [5]I.-G. Lim, and W.-W. Kim, "A Numerically Controlled Oscillator with a Fine Phase Tuner and a Rounding Processor," ETRI J., vol. 26, no. 6, Dec. 2004, pp. 657-660.
• [6]Y.-G. Kim, C.-W. Kim, S.-I. Kim, B.-G. Min, J.-M. Lee, and K.H. Lee, "An X-Band Carbon-Doped InGaP/GaAs Heterojunction Bipolar Transistor MMIC Oscillator," ETRI J., vol. 27, no. 1, Feb. 2005, pp. 75-80.
• [7]A.R. Brown, C.P. Jarrett, D.M. de Leeuw, and M. Matters, "Field-Effect Transistors Made from Solution-Processed Organic Semiconductors," Synthetic Metals, vol. 88, no. 1, Apr. 1997, pp. 37-55.
• [8]H. Klauk, D.J. Gundlach, and T.N. Jackson, "Fast Organic Thin-Film Transistor Circuits," IEEE Electron Dev. Lett., vol. 20, no. 6, June 1999, pp. 289-291.
• [9]B.R. Crone, A. Dodabalapur, R.W. Filas, Y.-Y. Lin, Z. Bao, J.H. O’Neill, W. Li, and H.E. Katz, "Design and Fabrication of Organic Complementary Circuits," J. Appl. Phys., vol. 89, no. 9, May 2001, pp. 75-80.
• [10]U. Zschieschang, H. Klauk, M. Halik, G. Schmid, and C. Dehm, "Flexible Organic Circuits with Printed Gate Electrodes," Advanced Materials, vol. 15, no. 14, July 2003, pp. 1147-1151.
• [11]H. Klauk, M. Halik, U. Zschieschang, F. Eder, G. Schmid, and C. Dehm, "Pentacene Organic Transistors and Ring Oscillators on Glass and on Flexible Polymeric Substrates," Appl. Phys. Lett, vol. 82, no. 23, 2003, pp. 4175-4177.
• [12]J.S. Jung, K.S. Cho and J. Jang, "A Large Grain Pentacene by Vapor Phase Deposition," J. of the Korean Physical Society, vol. 42, no. 92, 2003, pp. S428-S430.
• [13]S.H. Kim, H.Y. Choi, B.S. Kim, M.P. Hong, K.H. Chung, and J. Jang, "Organic Thin Film Transistor with Self Organized Pentacene," Proc. IDW’03, 2003, pp. 200-375.
• [14]C.J. Drury, C.M.J. Mutsaers, C.M. Hart, M. Matters, and D.M. de Leeuw, "Low-Cost All-Polymer Integrated Circuits," Appl. Phys. Lett., vol. 73, no. 1, July 6, 1998, pp. 108-110.
• [15]S. Richter, M. Ploetner, W.J. Fischer, M. Schneider, P. T. Nguyen, W. Plieth, N. Kiriy, and H.-J.P. Adler, "Development of Organic Thin Film Transistors Based on Flexible Substrates," Thin Solid Films, vol. 477, no. 1/2, Apr. 2005, pp. 140-147.
• [16]J. Jacobsen, A. Chiang, A. Hermanns, M. McDonald, F. Vicentini, M. Marentic, J. Atherton, E. Boling, F. Cuomo, P. Drzaic, A. Holman, G. Liu, S. Pearson, W. Peschke, D.P. Vu, and R. Stewart, "Plastic Film Displays with Nanoblock IC Drivers Integrated by F
• [17]Y. Lee, H. Li, and S.J. Fonash, "High-Performance Poly-Si TFTs on Plastic Substrates Using a Nano-Structured Separation Layer Approach," IEEE Trans. on Electron Devices, vol. 49, no. 8, 2002, pp. 1353-1360.
• [18]S.D. Theiss, P.G. Carey, P.M. Smith, P. Wickboldt, T.W. Sigmon, Y.J.Tung, and T.J. King, "Polysilicon Thin Film Transistors Fabricated at 100°C on a Flexible Plastic Substrate," IEDM ’98 Technical Digest, 1998, pp. 257-260.
• [19]S.H. Won, J.H. Hur, C.B. Lee, H.C. Nam, J.K. Chung, and J. Jang, "Hydrogenated Amorphous Silicon Thin-Film Transistor on Plastic with an Organic Gate Insulator," IEEE Electron Device Lett., vol. 25, no. 3, 2004, pp. 132-134.
• [20]J. Jeon, K.S. Choo, W.K. Lee, J.H. Song, and H.G. Kim, "Integrated a-Si Gate Driver Circuit for TFT-LCD Panel," Proc. SID, 2004, p. 10.
• [21]A. Nathan, A. Kumar, K. Sakariya, P. Servati, S. Sambandan, and D. Striakhilev, "Amorphous Silicon Thin Film Transistor Circuit Integration for Organic LED Displays on Glass and Plastic," IEEE J. Solid-State Circuits, vol. 39, no. 9, Sept. 2004, pp. 1477
• [22]K.S. Karim, A. Nathan, and J.A. Rowlands, "Amorphous Silicon Active Pixel Sensor Readout Circuit for Digital Imaging," IEEE Trans. on Electron Devices, vol. 50, no. 1, Jan. 2003, pp. 200-208.
• [23]Y.J. Choi, W.K. Kwak, K.S. Cho, S.K. Kim, and J. Jang, "Hydrogenated Amorphous Silicon Thin-Film Transistor with a Thin Gate Insulator," IEEE Electron Dev. Lett., vol. 21, no. 1, Jan. 2000, pp. 18-20.
• [24]K.S. Karim, A. Nathan, M. Hack, and W.I. Milne, "Drain-Bias Dependence of Threshold Voltage Stability of Amorphous Silicon TFTs," IEEE Electron Device Lett., vol. 25, no. 4, Apr. 2004, pp. 188-190.
• [25]J.P. Uyemura, CMOS Logic Circuit Design, Kluwer Academic Publisher, Norwell, MA, 1999.