Final Technical Report - 300°C Capable Electronics Platform and Temperature Sensor System For Enhanced Geothermal Systems

Chen, Cheng-Po ; Shaddock, David ; Sandvik, Peter ; Saia, Rich ; Amita Patil, Alexey Vert ; Zhang, Tan

General Electric Global Research

关键词: High Temperature Electronics;    Silicon Carbide;    15 Geothermal Energy High Temperature Electronics;    Integrated Circuits;    Integrated Circuits;   

DOI  :  10.2172/1056487
RP-ID  :  DOE/GO18181/Final
RP-ID  :  FG36-08GO18181
RP-ID  :  1056487

美国|英语

来源: UNT Digital Library

【 摘 要 】

A silicon carbide (SiC) based electronic temperature sensor prototype has been demonstrated to operate at 300°C. We showed continuous operation of 1,000 hours with SiC operational amplifier and surface mounted discreet resistors and capacitors on a ceramic circuit board. This feasibility demonstration is a major milestone in the development of high temperature electronics in general and high temperature geothermal exploration and well management tools in particular. SiC technology offers technical advantages that are not found in competing technologies such as silicon-on-insulator (SOI) at high temperatures of 200°C to 300°C and beyond. The SiC integrated circuits and packaging methods can be used in new product introduction by GE Oil and Gas for high temperature down-hole tools. The existing SiC fabrication facility at GE is sufficient to support the quantities currently demanded by the marketplace, and there are other entities in the United States and other countries capable of ramping up SiC technology manufacturing. The ceramic circuit boards are different from traditional organic-based electronics circuit boards, but the fabrication process is compatible with existing ceramic substrate manufacturing. This project has brought high temperature electronics forward, and brings us closer to commercializing tools that will enable and reduce the cost of enhanced geothermal technology to benefit the public in terms of providing clean renewable energy at lower costs.