Preparation of Anatase TiO2 Thin Films with (OiPr)2Ti(CH3COCHCONEt2)2 Precursor by MOCVD

Bulletin of the Korean chemical society

Kwangyeol Lee¹  Keun-Chong Kim¹  Byoung-Jae Bae¹  Won Seok Seo¹  Md. Arzu Miah¹  Joon T. Park¹ 

关键词: Titanium dioxide (TiO2);    Thin films;    MOCVD;    Ti precursor;    ¥â-Keto amide ligand;   

DOI  :  

学科分类：化学（综合）

来源: Korean Chemical Society

【 摘 要 】

The reaction of titanium tetraisopropoxide with 2 equiv of N,N-diethyl acetoacetamide affords Ti(OiPr)2(CH3COCHCONEt2)2 (1) as colorless crystals in 80% yield. Compound 1 is characterized by spectroscopic (Mass and 1H/13C NMR) and microanalytical data. Molecular structure of 1 has been determined by a single crystal X-ray diffraction study, which reveals that it is a monomeric, cis-diisopropoxide and contains a six coordinate Ti(IV) atom with a cis(CONEt2), trans(COCH3) configuration (1a) in a distorted octahedral environment. Variable-temperature 1H NMR spectra of 1 indicate that it exists as an equilibrium mixture of cis, trans (1a) and cis, cis (1b) isomers in a 0.57 : 0.43 ratio at ?20 oC in toluene-d8 solution. Thermal properties of 1 as a MOCVD precursor for titanium dioxide films have been evaluated by thermal gravimetric analysis and vapor pressure measurement. Thin films of pure anatase titanium dioxide (after annealing above 500 oC under oxygen) have been grown on Si(100) with precursor 1 in the substrate temperature range of 350- 500 oC using a bubbler-based MOCVD method.

【 授权许可】

Unknown