Effect of nitrogen flow ratio on structure and properties of zirconium nitride films on Si(100) prepared by ion beam sputtering

Bulletin of materials science

Shahab Norouzian¹  Reza Afzalzadeh³  Majid Mojtahedzadeh Larijani² 

[1] Physics Department, Iran University of Science and Technology, P.O. Box 16765-163, Tehran, Iran$$Physics Department, K. N. Toosi University of Technology, P.O. Box 16315-1618, Tehran, Iran$$Physics Department, Iran University of Science and Technology, P.O. Box 16765-163, Tehran, IranPhysics Department, Iran University of Science and Technology, P.O. Box 16765-163, Tehran, Iran$$Physics Department, K. N. Toosi University of Technology, P.O. Box 16315-1618, Tehran, Iran$$Physics Department, K. N. Toosi University of Technology, P.O. Box 16315-1618, Tehran, IranPhysics Department, Iran University of Science and Technology, P.O. Box 16765-163, Tehran, Iran$$Physics Department, K. N. Toosi University of Technology, P.O. Box 16315-1618, Tehran, Iran$$;Agricultural, Medical and Industrial Research School, P.O. Box 31485-498, Karaj, Iran$$Agricultural, Medical and Industrial Research School, P.O. Box 31485-498, Karaj, IranAgricultural, Medical and Industrial Research School, P.O. Box 31485-498, Karaj, Iran$$;Physics Department, K. N. Toosi University of Technology, P.O. Box 16315-1618, Tehran, Iran$$Physics Department, K. N. Toosi University of Technology, P.O. Box 16315-1618, Tehran, IranPhysics Department, K. N. Toosi University of Technology, P.O. Box 16315-1618, Tehran, Iran$$

关键词: Zirconium nitride;    ion beam sputtering;    reactive;    flow ratio.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

In this study, zirconium nitride thin films were deposited on Si substrates by ion beam sputtering (IBS). Influence of N₂/(N₂+Ar) on the structural and physical properties of the films has been investigated with respect to the atomic ratio between nitrogen and zirconium. It was found that the thickness of layers decreased by increasing the F(N₂). Moreover, crystalline plane peaks such as (111), (200) and (220) with (111) preferred orientation were observed due to strain energy which associate with (111) orientation in ZrN. Also, the fluctuation in nitrogen flow ratio results in colour and electrical resistivity of films.

【 授权许可】

Unknown