期刊论文详细信息
Bulletin of materials science
Low energy ion beam modification of Cu/Ni/Si(100) surface
V R Rmedicherla2  V Solanki1  D K Mishra2  S Choudhary1  S K Parida2  Shikha Varma1 
[1] Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005, India$$Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005, IndiaInstitute of Physics, Sachivalaya Marg, Bhubaneswar 751 005, India$$;Department of Physics, Institute of Technical Education & Research, Siksha ‘O’ Anusandhan University, Bhubaneswar 751 030, India$$Department of Physics, Institute of Technical Education & Research, Siksha ‘O’ Anusandhan University, Bhubaneswar 751 030, IndiaDepartment of Physics, Institute of Technical Education & Research, Siksha ‘O’ Anusandhan University, Bhubaneswar 751 030, India$$
关键词: X-ray photoelectron spectroscopy;    atomic force microscopy;    ion beam sputtering;    thin films;    thermal evaporation.;   
DOI  :  
学科分类:材料工程
来源: Indian Academy of Sciences
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【 摘 要 】

Cu/Ni bilayer has been prepared by thermal evaporation of pure Cu and Ni metals onto Si(100) surface in high vacuum; it was sputtered using argon ion beam in ultra-high vacuum. The ion beam-induced surface and interface modification was investigated using X-ray photoelectron spectroscopy and atomic force microscopy techniques. The deposited sample exhibits the formation of CuO nano-structures of size 40 nm on Cu surface and after sputtering with argon ion beam at a fluence of 5 �? 1015 ions/cm2, the surface exhibits a mound structure with an average size of about 100 nm. Interestingly, with sputtering at higher fluence of 2.4 �? 1016 ions/cm2, the surface exhibits broad pits of sizes ranging from 100 to 300 nm with an average depth of 10 nm. Bottom surface of these pits contains Ni atoms. The Cu 2�?3/2 peak exhibits a shift of 0.3 eV towards high binding energy and also a large asymmetry of 0.11 after sputtering at high fluence compared with pure copper. These changes are attributed to Cu�?�Ni interactions at the interface.

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