Low energy ion beam modification of Cu/Ni/Si(100) surface

Bulletin of materials science

V R Rmedicherla²  V Solanki¹  D K Mishra²  S Choudhary¹  S K Parida²  Shikha Varma¹ 

[1] Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005, India$$Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005, IndiaInstitute of Physics, Sachivalaya Marg, Bhubaneswar 751 005, India$$;Department of Physics, Institute of Technical Education & Research, Siksha ‘O’ Anusandhan University, Bhubaneswar 751 030, India$$Department of Physics, Institute of Technical Education & Research, Siksha ‘O’ Anusandhan University, Bhubaneswar 751 030, IndiaDepartment of Physics, Institute of Technical Education & Research, Siksha ‘O’ Anusandhan University, Bhubaneswar 751 030, India$$

关键词: X-ray photoelectron spectroscopy;    atomic force microscopy;    ion beam sputtering;    thin films;    thermal evaporation.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Cu/Ni bilayer has been prepared by thermal evaporation of pure Cu and Ni metals onto Si(100) surface in high vacuum; it was sputtered using argon ion beam in ultra-high vacuum. The ion beam-induced surface and interface modification was investigated using X-ray photoelectron spectroscopy and atomic force microscopy techniques. The deposited sample exhibits the formation of CuO nano-structures of size 40 nm on Cu surface and after sputtering with argon ion beam at a fluence of 5 Ã�? 10¹⁵ ions/cm², the surface exhibits a mound structure with an average size of about 100 nm. Interestingly, with sputtering at higher fluence of 2.4 Ã�? 10¹⁶ ions/cm², the surface exhibits broad pits of sizes ranging from 100 to 300 nm with an average depth of 10 nm. Bottom surface of these pits contains Ni atoms. The Cu 2ð‘�?_3/2 peak exhibits a shift of 0.3 eV towards high binding energy and also a large asymmetry of 0.11 after sputtering at high fluence compared with pure copper. These changes are attributed to Cuâ€�?�Ni interactions at the interface.

【 授权许可】

Unknown